Tehnilised dokumendid
Spetsifikatsioonid:
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.35 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.71mm
Typical Gate Charge @ Vgs
18.4 nC @ 10 V
Width
4.93mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
Height
16.13mm
Päritoluriik
China
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,976
tk (torus 10) (ilma käibemaksuta)
€ 1,191
tk (torus 10) (koos käibemaksuga)
10
€ 0,976
tk (torus 10) (ilma käibemaksuta)
€ 1,191
tk (torus 10) (koos käibemaksuga)
10
Osta lahtiselt
kogus | Ühikuhind | Per Tuub |
---|---|---|
10 - 40 | € 0,976 | € 9,76 |
50 - 90 | € 0,956 | € 9,56 |
100 - 290 | € 0,945 | € 9,45 |
300 - 590 | € 0,933 | € 9,33 |
600+ | € 0,92 | € 9,20 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.35 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.71mm
Typical Gate Charge @ Vgs
18.4 nC @ 10 V
Width
4.93mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
Height
16.13mm
Päritoluriik
China