N-Channel MOSFET, 47 A, 30 V, 8-Pin PowerDFN56 MagnaChip MDU1516URH

RS tootekood: 871-5012Bränd: MagnaChipTootja Part nr.: MDU1516URH
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

47 A

Maximum Drain Source Voltage

30 V

Package Type

PowerDFN56

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

14 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

35.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.1mm

Typical Gate Charge @ Vgs

14.6 nC @ 10 V

Width

5.1mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

1.1mm

Päritoluriik

China

Toote üksikasjad

Low Voltage (LV) MOSFET

These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.

MOSFET Transistors, MagnaChip

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€ 0,55

tk (rullis 25) (ilma käibemaksuta)

€ 0,671

tk (rullis 25) (koos käibemaksuga)

N-Channel MOSFET, 47 A, 30 V, 8-Pin PowerDFN56 MagnaChip MDU1516URH
Valige pakendi tüüp

€ 0,55

tk (rullis 25) (ilma käibemaksuta)

€ 0,671

tk (rullis 25) (koos käibemaksuga)

N-Channel MOSFET, 47 A, 30 V, 8-Pin PowerDFN56 MagnaChip MDU1516URH
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

47 A

Maximum Drain Source Voltage

30 V

Package Type

PowerDFN56

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

14 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

35.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.1mm

Typical Gate Charge @ Vgs

14.6 nC @ 10 V

Width

5.1mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

1.1mm

Päritoluriik

China

Toote üksikasjad

Low Voltage (LV) MOSFET

These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.

MOSFET Transistors, MagnaChip

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more