Tehnilised dokumendid
Spetsifikatsioonid:
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
150 mA
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.8V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
250 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
3mm
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Päritoluriik
China
Toote üksikasjad
N-Channel MOSFET, 100V and Higher, Nexperia
MOSFET Transistors, NXP Semiconductors
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,032
tk (rullis) (ilma käibemaksuta)
€ 0,039
tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
100
€ 0,032
tk (rullis) (ilma käibemaksuta)
€ 0,039
tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
100
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
150 mA
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.8V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
250 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
3mm
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Päritoluriik
China
Toote üksikasjad