Nexperia PBSS4480X,135 NPN Transistor, 4 A, 80 V, 4-Pin UPAK
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
NexperiaTransistor Type
NPN
Maximum DC Collector Current
4 A
Maximum Collector Emitter Voltage
80 V
Package Type
UPAK
Mounting Type
Surface Mount
Maximum Power Dissipation
2.5 W
Minimum DC Current Gain
250
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
150 MHz
Pin Count
4
Number of Elements per Chip
1
Dimensions
1.6 x 4.6 x 2.6mm
Maximum Operating Temperature
+150 °C
Toote üksikasjad
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
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€ 63,90
€ 0,639 tk (rullis) (ilma käibemaksuta)
€ 79,24
€ 0,792 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
100
€ 63,90
€ 0,639 tk (rullis) (ilma käibemaksuta)
€ 79,24
€ 0,792 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
100
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
| kogus | Ühikuhind | Per Rull |
|---|---|---|
| 100 - 240 | € 0,639 | € 6,39 |
| 250 - 490 | € 0,599 | € 5,99 |
| 500 - 990 | € 0,555 | € 5,55 |
| 1000+ | € 0,506 | € 5,06 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
NexperiaTransistor Type
NPN
Maximum DC Collector Current
4 A
Maximum Collector Emitter Voltage
80 V
Package Type
UPAK
Mounting Type
Surface Mount
Maximum Power Dissipation
2.5 W
Minimum DC Current Gain
250
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
150 MHz
Pin Count
4
Number of Elements per Chip
1
Dimensions
1.6 x 4.6 x 2.6mm
Maximum Operating Temperature
+150 °C
Toote üksikasjad
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products