Tehnilised dokumendid
Spetsifikatsioonid:
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
40 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
148 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.3mm
Typical Gate Charge @ Vgs
42.3 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
16mm
Minimum Operating Temperature
-55 °C
Päritoluriik
Philippines
Toote üksikasjad
N-Channel MOSFET, 40V to 55V
MOSFET Transistors, NXP Semiconductors
€ 54,00
€ 1,35 tk (torus) (ilma käibemaksuta)
€ 66,96
€ 1,674 tk (torus) (koos käibemaksuga)
Tootmispakett (Tuub)
40
€ 54,00
€ 1,35 tk (torus) (ilma käibemaksuta)
€ 66,96
€ 1,674 tk (torus) (koos käibemaksuga)
Tootmispakett (Tuub)
40
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Tuub |
---|---|---|
40 - 96 | € 1,35 | € 5,40 |
100 - 196 | € 1,25 | € 5,00 |
200 - 396 | € 1,15 | € 4,60 |
400+ | € 1,05 | € 4,20 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
40 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
148 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.3mm
Typical Gate Charge @ Vgs
42.3 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
16mm
Minimum Operating Temperature
-55 °C
Päritoluriik
Philippines
Toote üksikasjad