Tehnilised dokumendid
Spetsifikatsioonid:
Brand
NXPChannel Type
N
Idss Drain-Source Cut-off Current
1 → 5mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
-25V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Minimum Operating Temperature
-65 °C
Height
1mm
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Päritoluriik
China
Toote üksikasjad
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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Palun kontrollige hiljem uuesti.
€ 0,459
tk (rullis) (ilma käibemaksuta)
€ 0,56
tk (rullis) (koos käibemaksuga)
10
€ 0,459
tk (rullis) (ilma käibemaksuta)
€ 0,56
tk (rullis) (koos käibemaksuga)
10
Osta lahtiselt
kogus | Ühikuhind | Per Rull |
---|---|---|
10 - 90 | € 0,459 | € 4,59 |
100 - 240 | € 0,402 | € 4,02 |
250 - 490 | € 0,346 | € 3,46 |
500 - 990 | € 0,254 | € 2,54 |
1000+ | € 0,195 | € 1,95 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
NXPChannel Type
N
Idss Drain-Source Cut-off Current
1 → 5mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
-25V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Minimum Operating Temperature
-65 °C
Height
1mm
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Päritoluriik
China
Toote üksikasjad
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.