Tehnilised dokumendid
Spetsifikatsioonid:
Brand
NXPChannel Type
N
Idss Drain-Source Cut-off Current
12 to 60mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
-25V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
50 Ω
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Minimum Operating Temperature
-65 °C
Height
1mm
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Päritoluriik
China
Toote üksikasjad
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
€ 5,60
€ 0,112 tk (rullis) (ilma käibemaksuta)
€ 6,94
€ 0,139 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
50
€ 5,60
€ 0,112 tk (rullis) (ilma käibemaksuta)
€ 6,94
€ 0,139 tk (rullis) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
Tootmispakett (Rull)
50
Lao andmed ajutiselt ei ole saadaval.
| kogus | Ühikuhind | Per Rull |
|---|---|---|
| 50 - 90 | € 0,112 | € 1,12 |
| 100 - 240 | € 0,105 | € 1,05 |
| 250 - 490 | € 0,10 | € 1,00 |
| 500+ | € 0,086 | € 0,86 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
NXPChannel Type
N
Idss Drain-Source Cut-off Current
12 to 60mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
-25V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
50 Ω
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Minimum Operating Temperature
-65 °C
Height
1mm
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Päritoluriik
China
Toote üksikasjad
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.


