Tehnilised dokumendid
Spetsifikatsioonid:
Number of Elements per Chip
1
Channel Mode
Enhancement
Channel Type
P
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Maximum Gate Source Voltage
-25 V, +25 V
Pin Count
6
Transistor Configuration
Single
Minimum Gate Threshold Voltage
1V
Mounting Type
Surface Mount
Maximum Drain Source Voltage
30 V
Maximum Operating Temperature
+150 °C
Height
0.75mm
Length
2mm
Series
PowerTrench
Width
2mm
Maximum Power Dissipation
2.4 W
Maximum Continuous Drain Current
6.8 A
Package Type
MLP
Maximum Drain Source Resistance
35 mΩ
Brand
ON SemiconductorTypical Gate Charge @ Vgs
16 nC @ 10 V
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,715
tk (pakis 5) (ilma käibemaksuta)
€ 0,872
tk (pakis 5) (koos käibemaksuga)
Standard
5
€ 0,715
tk (pakis 5) (ilma käibemaksuta)
€ 0,872
tk (pakis 5) (koos käibemaksuga)
Standard
5
Osta lahtiselt
kogus | Ühikuhind | Per Pakend |
---|---|---|
5 - 20 | € 0,715 | € 3,58 |
25 - 95 | € 0,595 | € 2,98 |
100 - 245 | € 0,377 | € 1,88 |
250 - 495 | € 0,359 | € 1,80 |
500+ | € 0,338 | € 1,69 |
Tehnilised dokumendid
Spetsifikatsioonid:
Number of Elements per Chip
1
Channel Mode
Enhancement
Channel Type
P
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Maximum Gate Source Voltage
-25 V, +25 V
Pin Count
6
Transistor Configuration
Single
Minimum Gate Threshold Voltage
1V
Mounting Type
Surface Mount
Maximum Drain Source Voltage
30 V
Maximum Operating Temperature
+150 °C
Height
0.75mm
Length
2mm
Series
PowerTrench
Width
2mm
Maximum Power Dissipation
2.4 W
Maximum Continuous Drain Current
6.8 A
Package Type
MLP
Maximum Drain Source Resistance
35 mΩ
Brand
ON SemiconductorTypical Gate Charge @ Vgs
16 nC @ 10 V