Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ON SemiconductorChannel Type
N
Idss Drain-Source Cut-off Current
12 → 30mA
Maximum Drain Source Voltage
10 V
Maximum Gate Source Voltage
-25 V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Drain Gate On-Capacitance
2.5pF
Source Gate On-Capacitance
5pF
Dimensions
2.92 x 1.3 x 0.93mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
2.92mm
Height
0.93mm
Width
1.3mm
Toote üksikasjad
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,077
tk (lindis) (ilma käibemaksuta)
€ 0,094
tk (lindis) (koos käibemaksuga)
50
€ 0,077
tk (lindis) (ilma käibemaksuta)
€ 0,094
tk (lindis) (koos käibemaksuga)
50
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ON SemiconductorChannel Type
N
Idss Drain-Source Cut-off Current
12 → 30mA
Maximum Drain Source Voltage
10 V
Maximum Gate Source Voltage
-25 V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Drain Gate On-Capacitance
2.5pF
Source Gate On-Capacitance
5pF
Dimensions
2.92 x 1.3 x 0.93mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
2.92mm
Height
0.93mm
Width
1.3mm
Toote üksikasjad
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.