Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
600 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Maximum Power Dissipation
78 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+30 V
Typical Gate Charge @ Vgs
12 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Width
6.22mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
2.38mm
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Palun kontrollige hiljem uuesti.
€ 1,00
tk (pakis 5) (ilma käibemaksuta)
€ 1,22
tk (pakis 5) (koos käibemaksuga)
5
€ 1,00
tk (pakis 5) (ilma käibemaksuta)
€ 1,22
tk (pakis 5) (koos käibemaksuga)
5
Osta lahtiselt
kogus | Ühikuhind | Per Pakend |
---|---|---|
5 - 45 | € 1,00 | € 5,00 |
50 - 120 | € 0,554 | € 2,77 |
125 - 245 | € 0,377 | € 1,88 |
250 - 495 | € 0,338 | € 1,69 |
500+ | € 0,302 | € 1,51 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
600 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Maximum Power Dissipation
78 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+30 V
Typical Gate Charge @ Vgs
12 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Width
6.22mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
2.38mm