Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
0.6 to 1.5mA
Maximum Drain Source Voltage
30 V
Maximum Drain Gate Voltage
-30V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
200 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.9 x 1.5 x 1.1mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
1.1mm
Width
1.5mm
Toote üksikasjad
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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Palun kontrollige hiljem uuesti.
€ 0,224
tk (pakis 100) (ilma käibemaksuta)
€ 0,273
tk (pakis 100) (koos käibemaksuga)
100
€ 0,224
tk (pakis 100) (ilma käibemaksuta)
€ 0,273
tk (pakis 100) (koos käibemaksuga)
100
Osta lahtiselt
kogus | Ühikuhind | Per Pakend |
---|---|---|
100 - 100 | € 0,224 | € 22,40 |
200 - 400 | € 0,193 | € 19,30 |
500 - 900 | € 0,176 | € 17,60 |
1000 - 1900 | € 0,159 | € 15,90 |
2000+ | € 0,152 | € 15,20 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
0.6 to 1.5mA
Maximum Drain Source Voltage
30 V
Maximum Drain Gate Voltage
-30V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
200 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.9 x 1.5 x 1.1mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
1.1mm
Width
1.5mm
Toote üksikasjad
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.