N-Channel MOSFET, 170 mA, 100 V, 3-Pin SOT-23 onsemi BSS123LT1G
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
170 mA
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.8V
Maximum Power Dissipation
225 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.9mm
Width
1.3mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.94mm
Toote üksikasjad
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,25
tk (rullis) (ilma käibemaksuta)
€ 0,305
tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
10
€ 0,25
tk (rullis) (ilma käibemaksuta)
€ 0,305
tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
10
Osta lahtiselt
| kogus | Ühikuhind | Per Rull |
|---|---|---|
| 10 - 90 | € 0,25 | € 2,50 |
| 100 - 240 | € 0,216 | € 2,16 |
| 250 - 490 | € 0,187 | € 1,87 |
| 500 - 990 | € 0,164 | € 1,64 |
| 1000+ | € 0,15 | € 1,50 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
170 mA
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.8V
Maximum Power Dissipation
225 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.9mm
Width
1.3mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.94mm
Toote üksikasjad
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products