onsemi FGH40N60SMDF IGBT, 80 A 600 V, 3-Pin TO-247AB, Through Hole
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
349 W
Package Type
TO-247AB
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.6 x 4.7 x 20.6mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Toote üksikasjad
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 6,80
tk (torus) (ilma käibemaksuta)
€ 8,30
tk (torus) (koos käibemaksuga)
Tootmispakett (Tuub)
1
€ 6,80
tk (torus) (ilma käibemaksuta)
€ 8,30
tk (torus) (koos käibemaksuga)
Tootmispakett (Tuub)
1
Osta lahtiselt
| kogus | Ühikuhind |
|---|---|
| 1 - 9 | € 6,80 |
| 10 - 99 | € 5,80 |
| 100 - 499 | € 5,10 |
| 500 - 999 | € 4,45 |
| 1000+ | € 4,05 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
349 W
Package Type
TO-247AB
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.6 x 4.7 x 20.6mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Toote üksikasjad
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products