onsemi P-Channel MOSFET, 2.9 A, 60 V, 6-Pin TSOP-6 NTGS5120PT1G

RS tootekood: 780-0579PBränd: onsemiTootja Part nr.: NTGS5120PT1G
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

2.9 A

Maximum Drain Source Voltage

60 V

Package Type

TSOP-6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

142 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

1.4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.7mm

Number of Elements per Chip

1

Transistor Material

Si

Length

3.1mm

Typical Gate Charge @ Vgs

18.1 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Lao andmed ajutiselt ei ole saadaval.

€ 35,00

tk (rullis) (ilma käibemaksuta)

€ 42,70

tk (rullis) (koos käibemaksuga)

onsemi P-Channel MOSFET, 2.9 A, 60 V, 6-Pin TSOP-6 NTGS5120PT1G
Valige pakendi tüüp

€ 35,00

tk (rullis) (ilma käibemaksuta)

€ 42,70

tk (rullis) (koos käibemaksuga)

onsemi P-Channel MOSFET, 2.9 A, 60 V, 6-Pin TSOP-6 NTGS5120PT1G
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

2.9 A

Maximum Drain Source Voltage

60 V

Package Type

TSOP-6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

142 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

1.4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.7mm

Number of Elements per Chip

1

Transistor Material

Si

Length

3.1mm

Typical Gate Charge @ Vgs

18.1 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more