Dual P-Channel MOSFET, 4.1 A, 20 V, 8-Pin ChipFET onsemi NTHD4102PT1G

RS tootekood: 780-0589Bränd: onsemiTootja Part nr.: NTHD4102PT1G
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

4.1 A

Maximum Drain Source Voltage

20 V

Package Type

ChipFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

170 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

2.1 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-8 V, +8 V

Maximum Operating Temperature

+150 °C

Length

3.1mm

Typical Gate Charge @ Vgs

7.6 nC @ 4.5 V

Width

1.7mm

Transistor Material

Si

Number of Elements per Chip

2

Minimum Operating Temperature

-55 °C

Height

1.1mm

Toote üksikasjad

Dual P-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 0,364

tk (lindis) (ilma käibemaksuta)

€ 0,444

tk (lindis) (koos käibemaksuga)

Dual P-Channel MOSFET, 4.1 A, 20 V, 8-Pin ChipFET onsemi NTHD4102PT1G
Valige pakendi tüüp

€ 0,364

tk (lindis) (ilma käibemaksuta)

€ 0,444

tk (lindis) (koos käibemaksuga)

Dual P-Channel MOSFET, 4.1 A, 20 V, 8-Pin ChipFET onsemi NTHD4102PT1G
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

4.1 A

Maximum Drain Source Voltage

20 V

Package Type

ChipFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

170 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

2.1 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-8 V, +8 V

Maximum Operating Temperature

+150 °C

Length

3.1mm

Typical Gate Charge @ Vgs

7.6 nC @ 4.5 V

Width

1.7mm

Transistor Material

Si

Number of Elements per Chip

2

Minimum Operating Temperature

-55 °C

Height

1.1mm

Toote üksikasjad

Dual P-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more