Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
40 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
4.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
55 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
6.1mm
Length
5.1mm
Typical Gate Charge @ Vgs
18 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.05mm
Päritoluriik
Malaysia
€ 9,86
€ 0,986 tk (pakis 10) (ilma käibemaksuta)
€ 12,23
€ 1,223 tk (pakis 10) (koos käibemaksuga)
Standard
10
€ 9,86
€ 0,986 tk (pakis 10) (ilma käibemaksuta)
€ 12,23
€ 1,223 tk (pakis 10) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
Standard
10
Lao andmed ajutiselt ei ole saadaval.
kogus | Ühikuhind | Per Pakend |
---|---|---|
10 - 90 | € 0,986 | € 9,86 |
100 - 240 | € 0,849 | € 8,49 |
250 - 490 | € 0,737 | € 7,37 |
500 - 990 | € 0,648 | € 6,48 |
1000+ | € 0,589 | € 5,89 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
40 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
4.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
55 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
6.1mm
Length
5.1mm
Typical Gate Charge @ Vgs
18 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.05mm
Päritoluriik
Malaysia