Tehnilised dokumendid
Spetsifikatsioonid:
Brand
SemikronMaximum Continuous Collector Current
81 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Package Type
SEMITRANS2
Configuration
Dual Half Bridge
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Transistor Configuration
Series
Dimensions
94 x 34 x 30.1mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Toote üksikasjad
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 96,50
tk (ilma käibemaksuta)
€ 117,73
tk (koos käibemaksuga)
1
€ 96,50
tk (ilma käibemaksuta)
€ 117,73
tk (koos käibemaksuga)
1
Osta lahtiselt
kogus | Ühikuhind |
---|---|
1 - 1 | € 96,50 |
2 - 4 | € 92,00 |
5 - 9 | € 85,00 |
10 - 19 | € 81,00 |
20+ | € 77,00 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
SemikronMaximum Continuous Collector Current
81 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Package Type
SEMITRANS2
Configuration
Dual Half Bridge
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Transistor Configuration
Series
Dimensions
94 x 34 x 30.1mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Toote üksikasjad
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.