Tehnilised dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
1.5 A
Maximum Drain Source Voltage
18 V
Package Type
SOT-89
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Maximum Power Dissipation
6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-0.5 V, +15 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
4.6mm
Width
2.6mm
Height
1.6mm
Toote üksikasjad
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.
MOSFET Transistors, STMicroelectronics
€ 29,00
€ 2,90 tk (rullis) (ilma käibemaksuta)
€ 35,96
€ 3,596 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
10
€ 29,00
€ 2,90 tk (rullis) (ilma käibemaksuta)
€ 35,96
€ 3,596 tk (rullis) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
Tootmispakett (Rull)
10
Lao andmed ajutiselt ei ole saadaval.
kogus | Ühikuhind | Per Rull |
---|---|---|
10 - 20 | € 2,90 | € 14,50 |
25 - 95 | € 2,75 | € 13,75 |
100 - 495 | € 2,20 | € 11,00 |
500+ | € 1,95 | € 9,75 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
1.5 A
Maximum Drain Source Voltage
18 V
Package Type
SOT-89
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Maximum Power Dissipation
6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-0.5 V, +15 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
4.6mm
Width
2.6mm
Height
1.6mm
Toote üksikasjad
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.