Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
650 V
Series
MDmesh
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
4.6mm
Length
10.4mm
Typical Gate Charge @ Vgs
46 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
16.4mm
Product details
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 117.50
€ 2.35 Each (In a Tube of 50) (Exc. Vat)
€ 145.70
€ 2.914 Each (In a Tube of 50) (inc. VAT)
50
€ 117.50
€ 2.35 Each (In a Tube of 50) (Exc. Vat)
€ 145.70
€ 2.914 Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable.
50
Stock information temporarily unavailable.
Quantity | Unit price | Per Tube |
---|---|---|
50 - 50 | € 2.35 | € 117.50 |
100 - 450 | € 1.95 | € 97.50 |
500 - 950 | € 1.90 | € 95.00 |
1000 - 4950 | € 1.85 | € 92.50 |
5000+ | € 1.80 | € 90.00 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
650 V
Series
MDmesh
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
4.6mm
Length
10.4mm
Typical Gate Charge @ Vgs
46 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
16.4mm
Product details