Tehnilised dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsMaximum Continuous Collector Current
25 A
Maximum Collector Emitter Voltage
425 V
Maximum Gate Emitter Voltage
±16V
Maximum Power Dissipation
125 W
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
6.6 x 6.2 x 2.4mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Toote üksikasjad
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 2,50
tk (rullis) (ilma käibemaksuta)
€ 3,05
tk (rullis) (koos käibemaksuga)
5
€ 2,50
tk (rullis) (ilma käibemaksuta)
€ 3,05
tk (rullis) (koos käibemaksuga)
5
Osta lahtiselt
kogus | Ühikuhind | Per Rull |
---|---|---|
5 - 5 | € 2,50 | € 12,50 |
10 - 95 | € 2,10 | € 10,50 |
100 - 495 | € 1,65 | € 8,25 |
500+ | € 1,45 | € 7,25 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsMaximum Continuous Collector Current
25 A
Maximum Collector Emitter Voltage
425 V
Maximum Gate Emitter Voltage
±16V
Maximum Power Dissipation
125 W
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
6.6 x 6.2 x 2.4mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Toote üksikasjad
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.