Tehnilised dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
600 V
Package Type
PowerFLAT 8 x 8 HV
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
215 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Maximum Operating Temperature
+150 °C
Length
8.1mm
Typical Gate Charge @ Vgs
24 nC @ 10 V
Width
8.1mm
Number of Elements per Chip
1
Forward Diode Voltage
1.6V
Height
0.9mm
Minimum Operating Temperature
-55 °C
Päritoluriik
China
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 3,95
tk (pakis 5) (ilma käibemaksuta)
€ 4,819
tk (pakis 5) (koos käibemaksuga)
Standard
5
€ 3,95
tk (pakis 5) (ilma käibemaksuta)
€ 4,819
tk (pakis 5) (koos käibemaksuga)
Standard
5
Osta lahtiselt
kogus | Ühikuhind | Per Pakend |
---|---|---|
5 - 20 | € 3,95 | € 19,75 |
25 - 45 | € 3,70 | € 18,50 |
50 - 120 | € 3,50 | € 17,50 |
125 - 245 | € 3,30 | € 16,50 |
250+ | € 3,15 | € 15,75 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
600 V
Package Type
PowerFLAT 8 x 8 HV
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
215 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Maximum Operating Temperature
+150 °C
Length
8.1mm
Typical Gate Charge @ Vgs
24 nC @ 10 V
Width
8.1mm
Number of Elements per Chip
1
Forward Diode Voltage
1.6V
Height
0.9mm
Minimum Operating Temperature
-55 °C
Päritoluriik
China