Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
800 V
Package Type
TO-251
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
94 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
2.3mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.5mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Height
7mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 2,35
tk (rullis 1875) (ilma käibemaksuta)
€ 2,867
tk (rullis 1875) (koos käibemaksuga)
1875
€ 2,35
tk (rullis 1875) (ilma käibemaksuta)
€ 2,867
tk (rullis 1875) (koos käibemaksuga)
1875
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
800 V
Package Type
TO-251
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
94 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
2.3mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.5mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Height
7mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V