Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
800 V
Package Type
ITO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
38.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Typical Gate Charge @ Vgs
20 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
10mm
Width
4.6mm
Number of Elements per Chip
1
Forward Diode Voltage
1.5V
Height
15mm
Minimum Operating Temperature
-55 °C
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 3,55
tk (rullis 1000) (ilma käibemaksuta)
€ 4,331
tk (rullis 1000) (koos käibemaksuga)
1000
€ 3,55
tk (rullis 1000) (ilma käibemaksuta)
€ 4,331
tk (rullis 1000) (koos käibemaksuga)
1000
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
800 V
Package Type
ITO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
38.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Typical Gate Charge @ Vgs
20 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
10mm
Width
4.6mm
Number of Elements per Chip
1
Forward Diode Voltage
1.5V
Height
15mm
Minimum Operating Temperature
-55 °C