Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
2.9 A
Maximum Drain Source Voltage
12 V
Package Type
PICOSTAR
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Width
1.04mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
2 nC @ 0 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
0.64mm
Height
0.35mm
Series
FemtoFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Päritoluriik
Philippines
Toote üksikasjad
N-Channel FemtoFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,032
tk (rullis 250) (ilma käibemaksuta)
€ 0,039
tk (rullis 250) (koos käibemaksuga)
250
€ 0,032
tk (rullis 250) (ilma käibemaksuta)
€ 0,039
tk (rullis 250) (koos käibemaksuga)
250
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
2.9 A
Maximum Drain Source Voltage
12 V
Package Type
PICOSTAR
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Width
1.04mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
2 nC @ 0 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
0.64mm
Height
0.35mm
Series
FemtoFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Päritoluriik
Philippines
Toote üksikasjad