Silicon P-Channel MOSFET, 2 A, 60 V, 3-Pin SOT-23 Toshiba SSM3J356R,LF(T
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaChannel Type
P
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
4e+008 Ω
Maximum Gate Threshold Voltage
2V
Number of Elements per Chip
1
Transistor Material
Silicon
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Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,172
tk (rullis) (ilma käibemaksuta)
€ 0,21
tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
100
€ 0,172
tk (rullis) (ilma käibemaksuta)
€ 0,21
tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
100
Osta lahtiselt
| kogus | Ühikuhind | Per Rull |
|---|---|---|
| 100 - 200 | € 0,172 | € 8,60 |
| 250 - 450 | € 0,168 | € 8,40 |
| 500 - 950 | € 0,166 | € 8,30 |
| 1000+ | € 0,155 | € 7,75 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaChannel Type
P
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
4e+008 Ω
Maximum Gate Threshold Voltage
2V
Number of Elements per Chip
1
Transistor Material
Silicon
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products