Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
56 A
Maximum Drain Source Voltage
120 V
Series
TK
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
69 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.5mm
Transistor Material
Si
Height
15mm
Päritoluriik
China
Toote üksikasjad
MOSFET Transistors, Toshiba
€ 9,60
€ 2,40 tk (pakis 4) (ilma käibemaksuta)
€ 11,71
€ 2,928 tk (pakis 4) (koos käibemaksuga)
Standard
4
€ 9,60
€ 2,40 tk (pakis 4) (ilma käibemaksuta)
€ 11,71
€ 2,928 tk (pakis 4) (koos käibemaksuga)
Standard
4
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
56 A
Maximum Drain Source Voltage
120 V
Series
TK
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
69 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.5mm
Transistor Material
Si
Height
15mm
Päritoluriik
China
Toote üksikasjad