Toshiba TK N-Channel MOSFET, 72 A, 120 V, 3-Pin TO-220 TK72E12N1,S1X(S

RS tootekood: 827-6277Bränd: ToshibaTootja Part nr.: TK72E12N1,S1X(S
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

72 A

Maximum Drain Source Voltage

120 V

Series

TK

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

225 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10.16mm

Typical Gate Charge @ Vgs

130 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Number of Elements per Chip

1

Width

4.45mm

Height

15.1mm

Päritoluriik

China

Toote üksikasjad

MOSFET N-Channel, TK6 & TK7 Series, Toshiba

MOSFET Transistors, Toshiba

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Lao andmed ajutiselt ei ole saadaval.

€ 17,25

€ 3,45 tk (pakis 5) (ilma käibemaksuta)

€ 21,39

€ 4,278 tk (pakis 5) (koos käibemaksuga)

Toshiba TK N-Channel MOSFET, 72 A, 120 V, 3-Pin TO-220 TK72E12N1,S1X(S
Valige pakendi tüüp

€ 17,25

€ 3,45 tk (pakis 5) (ilma käibemaksuta)

€ 21,39

€ 4,278 tk (pakis 5) (koos käibemaksuga)

Toshiba TK N-Channel MOSFET, 72 A, 120 V, 3-Pin TO-220 TK72E12N1,S1X(S
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

kogusÜhikuhindPer Pakend
5 - 20€ 3,45€ 17,25
25 - 45€ 3,05€ 15,25
50 - 120€ 2,65€ 13,25
125 - 245€ 2,50€ 12,50
250+€ 2,35€ 11,75

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

72 A

Maximum Drain Source Voltage

120 V

Series

TK

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

225 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10.16mm

Typical Gate Charge @ Vgs

130 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Number of Elements per Chip

1

Width

4.45mm

Height

15.1mm

Päritoluriik

China

Toote üksikasjad

MOSFET N-Channel, TK6 & TK7 Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more