Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
72 A
Maximum Drain Source Voltage
120 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
225 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.16mm
Typical Gate Charge @ Vgs
130 nC @ 10 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Width
4.45mm
Height
15.1mm
Päritoluriik
China
Toote üksikasjad
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
€ 17,25
€ 3,45 tk (pakis 5) (ilma käibemaksuta)
€ 21,39
€ 4,278 tk (pakis 5) (koos käibemaksuga)
Standard
5
€ 17,25
€ 3,45 tk (pakis 5) (ilma käibemaksuta)
€ 21,39
€ 4,278 tk (pakis 5) (koos käibemaksuga)
Standard
5
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Pakend |
---|---|---|
5 - 20 | € 3,45 | € 17,25 |
25 - 45 | € 3,05 | € 15,25 |
50 - 120 | € 2,65 | € 13,25 |
125 - 245 | € 2,50 | € 12,50 |
250+ | € 2,35 | € 11,75 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
72 A
Maximum Drain Source Voltage
120 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
225 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.16mm
Typical Gate Charge @ Vgs
130 nC @ 10 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Width
4.45mm
Height
15.1mm
Päritoluriik
China
Toote üksikasjad