Toshiba TTC3710B,S4X(S NPN Transistor, 12 A, 80 V, 3-Pin TO-220SIS
Technical Document
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
12 A
Maximum Collector Emitter Voltage
80 V
Package Type
TO-220SIS
Mounting Type
Through Hole
Maximum Power Dissipation
30 W
Minimum DC Current Gain
120
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
80 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
10 x 4.5 x 15mm
Maximum Operating Temperature
+150 °C
Country of Origin
Japan
Product details
NPN Power Transistors, Toshiba
Bipolar Transistors, Toshiba
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€ 7.00
€ 1.40 Each (In a Pack of 5) (Exc. Vat)
€ 8.68
€ 1.736 Each (In a Pack of 5) (inc. VAT)
5
€ 7.00
€ 1.40 Each (In a Pack of 5) (Exc. Vat)
€ 8.68
€ 1.736 Each (In a Pack of 5) (inc. VAT)
5
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| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | € 1.40 | € 7.00 |
| 25+ | € 1.20 | € 6.00 |
Ideate. Create. Collaborate
JOIN FOR FREE
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Technical Document
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
12 A
Maximum Collector Emitter Voltage
80 V
Package Type
TO-220SIS
Mounting Type
Through Hole
Maximum Power Dissipation
30 W
Minimum DC Current Gain
120
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
80 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
10 x 4.5 x 15mm
Maximum Operating Temperature
+150 °C
Country of Origin
Japan
Product details
NPN Power Transistors, Toshiba
Bipolar Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products