Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaTransistor Type
NPN
Maximum Continuous Collector Current
6 A
Maximum Collector Emitter Voltage
400 V
Maximum Emitter Base Voltage
5 V
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Configuration
Single
Number of Elements per Chip
2
Minimum DC Current Gain
100
Maximum Base Emitter Saturation Voltage
2.5 V
Maximum Collector Base Voltage
600 V
Maximum Collector Emitter Saturation Voltage
2 V
Maximum Collector Cut-off Current
20µA
Maximum Operating Temperature
+150 °C
Length
10mm
Base Current
1A
Height
15mm
Width
4.5mm
Maximum Power Dissipation
25 W @ 25 °C
Dimensions
10 x 4.5 x 15mm
Päritoluriik
Japan
Toote üksikasjad
NPN Darlington Transistors, Toshiba
Bipolar Transistors, Toshiba
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,751
tk (pakis 10) (ilma käibemaksuta)
€ 0,916
tk (pakis 10) (koos käibemaksuga)
10
€ 0,751
tk (pakis 10) (ilma käibemaksuta)
€ 0,916
tk (pakis 10) (koos käibemaksuga)
10
Osta lahtiselt
kogus | Ühikuhind | Per Pakend |
---|---|---|
10 - 20 | € 0,751 | € 7,51 |
30+ | € 0,637 | € 6,37 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaTransistor Type
NPN
Maximum Continuous Collector Current
6 A
Maximum Collector Emitter Voltage
400 V
Maximum Emitter Base Voltage
5 V
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Configuration
Single
Number of Elements per Chip
2
Minimum DC Current Gain
100
Maximum Base Emitter Saturation Voltage
2.5 V
Maximum Collector Base Voltage
600 V
Maximum Collector Emitter Saturation Voltage
2 V
Maximum Collector Cut-off Current
20µA
Maximum Operating Temperature
+150 °C
Length
10mm
Base Current
1A
Height
15mm
Width
4.5mm
Maximum Power Dissipation
25 W @ 25 °C
Dimensions
10 x 4.5 x 15mm
Päritoluriik
Japan
Toote üksikasjad