Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
30 V
Series
TrenchFET
Package Type
1212
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
46.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
3.15mm
Typical Gate Charge @ Vgs
38.5 nC @ 10 V
Width
3.15mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.7V
Height
1.07mm
Päritoluriik
China
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,322
tk (rullis 3000) (ilma käibemaksuta)
€ 0,393
tk (rullis 3000) (koos käibemaksuga)
3000
€ 0,322
tk (rullis 3000) (ilma käibemaksuta)
€ 0,393
tk (rullis 3000) (koos käibemaksuga)
3000
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
30 V
Series
TrenchFET
Package Type
1212
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
46.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
3.15mm
Typical Gate Charge @ Vgs
38.5 nC @ 10 V
Width
3.15mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.7V
Height
1.07mm
Päritoluriik
China