Vishay P-Channel MOSFET, 1.1 A, 60 V, 4-Pin HVMDIP IRFD9014PBF

RS tootekood: 541-0733Bränd: VishayTootja Part nr.: IRFD9014PBF
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

1.1 A

Maximum Drain Source Voltage

60 V

Package Type

HVMDIP

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

500 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

12 nC @ 10 V

Width

6.29mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Maximum Operating Temperature

+175 °C

Height

3.37mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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P-channel MOSFET,IRFD9014 1.1A 60V
P.O.A.tk (ilma käibemaksuta)

€ 0,76

€ 0,76 tk (ilma käibemaksuta)

€ 0,94

€ 0,94 tk (koos käibemaksuga)

Vishay P-Channel MOSFET, 1.1 A, 60 V, 4-Pin HVMDIP IRFD9014PBF
Valige pakendi tüüp

€ 0,76

€ 0,76 tk (ilma käibemaksuta)

€ 0,94

€ 0,94 tk (koos käibemaksuga)

Vishay P-Channel MOSFET, 1.1 A, 60 V, 4-Pin HVMDIP IRFD9014PBF

Lao andmed ajutiselt ei ole saadaval.

Valige pakendi tüüp

Lao andmed ajutiselt ei ole saadaval.

kogusÜhikuhind
1 - 9€ 0,76
10 - 49€ 0,68
50 - 99€ 0,61
100 - 249€ 0,58
250+€ 0,53

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Teid võib huvitada
P-channel MOSFET,IRFD9014 1.1A 60V
P.O.A.tk (ilma käibemaksuta)

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

1.1 A

Maximum Drain Source Voltage

60 V

Package Type

HVMDIP

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

500 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

12 nC @ 10 V

Width

6.29mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Maximum Operating Temperature

+175 °C

Height

3.37mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Teid võib huvitada
P-channel MOSFET,IRFD9014 1.1A 60V
P.O.A.tk (ilma käibemaksuta)