Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
12 V
Series
TrenchFET
Package Type
TSOP-6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
33 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
4.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Width
1.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.1mm
Typical Gate Charge @ Vgs
58 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Päritoluriik
China
Toote üksikasjad
P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 102,40
tk (rullis) (ilma käibemaksuta)
€ 126,98
tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
200
€ 102,40
tk (rullis) (ilma käibemaksuta)
€ 126,98
tk (rullis) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
Tootmispakett (Rull)
200
Lao andmed ajutiselt ei ole saadaval.
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
12 V
Series
TrenchFET
Package Type
TSOP-6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
33 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
4.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Width
1.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.1mm
Typical Gate Charge @ Vgs
58 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Päritoluriik
China
Toote üksikasjad


