Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
9.9 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
33 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
31 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.98mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.08mm
Typical Gate Charge @ Vgs
30 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.85mm
Minimum Operating Temperature
-55 °C
Päritoluriik
China
Toote üksikasjad
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 5,74
€ 0,287 tk (pakis 20) (ilma käibemaksuta)
€ 7,00
€ 0,35 tk (pakis 20) (koos käibemaksuga)
Standard
20
€ 5,74
€ 0,287 tk (pakis 20) (ilma käibemaksuta)
€ 7,00
€ 0,35 tk (pakis 20) (koos käibemaksuga)
Standard
20
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
9.9 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
33 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
31 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.98mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.08mm
Typical Gate Charge @ Vgs
30 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.85mm
Minimum Operating Temperature
-55 °C
Päritoluriik
China
Toote üksikasjad