Vishay P-Channel MOSFET, 9.9 A, 30 V, 8-Pin PowerPAK ChipFET SI5419DU-T1-GE3

RS tootekood: 818-1312Bränd: VishayTootja Part nr.: SI5419DU-T1-GE3
brand-logo
Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

9.9 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK ChipFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

33 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

31 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.98mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.08mm

Typical Gate Charge @ Vgs

30 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

0.85mm

Minimum Operating Temperature

-55 °C

Päritoluriik

China

Toote üksikasjad

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Lao andmed ajutiselt ei ole saadaval.

€ 5,74

€ 0,287 tk (pakis 20) (ilma käibemaksuta)

€ 7,00

€ 0,35 tk (pakis 20) (koos käibemaksuga)

Vishay P-Channel MOSFET, 9.9 A, 30 V, 8-Pin PowerPAK ChipFET SI5419DU-T1-GE3
Valige pakendi tüüp

€ 5,74

€ 0,287 tk (pakis 20) (ilma käibemaksuta)

€ 7,00

€ 0,35 tk (pakis 20) (koos käibemaksuga)

Vishay P-Channel MOSFET, 9.9 A, 30 V, 8-Pin PowerPAK ChipFET SI5419DU-T1-GE3
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

9.9 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK ChipFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

33 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

31 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.98mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.08mm

Typical Gate Charge @ Vgs

30 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

0.85mm

Minimum Operating Temperature

-55 °C

Päritoluriik

China

Toote üksikasjad

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more