N-Channel MOSFET, 4.4 A, 800 V, 3-Pin D2PAK Vishay SIHB5N80AE-GE3

RS tootekood: 225-9912Bränd: VishayTootja Part nr.: SIHB5N80AE-GE3
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

4.4 A

Maximum Drain Source Voltage

800 V

Package Type

D2PAK (TO-263)

Series

E-Series

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.3 Ω

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

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€ 6,08

€ 0,608 tk (pakis 10) (ilma käibemaksuta)

€ 7,42

€ 0,742 tk (pakis 10) (koos käibemaksuga)

N-Channel MOSFET, 4.4 A, 800 V, 3-Pin D2PAK Vishay SIHB5N80AE-GE3
Valige pakendi tüüp

€ 6,08

€ 0,608 tk (pakis 10) (ilma käibemaksuta)

€ 7,42

€ 0,742 tk (pakis 10) (koos käibemaksuga)

N-Channel MOSFET, 4.4 A, 800 V, 3-Pin D2PAK Vishay SIHB5N80AE-GE3
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

4.4 A

Maximum Drain Source Voltage

800 V

Package Type

D2PAK (TO-263)

Series

E-Series

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.3 Ω

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more