Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
8 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
4.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.89mm
Transistor Material
Si
Typical Gate Charge @ Vgs
20 nC @ 10 V, 8.8 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
4.9mm
Minimum Operating Temperature
-55 °C
Height
1.04mm
Päritoluriik
China
Toote üksikasjad
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 1,05
tk (rullis) (ilma käibemaksuta)
€ 1,281
tk (rullis) (koos käibemaksuga)
5
€ 1,05
tk (rullis) (ilma käibemaksuta)
€ 1,281
tk (rullis) (koos käibemaksuga)
5
Osta lahtiselt
kogus | Ühikuhind | Per Rull |
---|---|---|
5 - 45 | € 1,05 | € 5,25 |
50 - 245 | € 0,988 | € 4,94 |
250 - 495 | € 0,728 | € 3,64 |
500 - 1245 | € 0,676 | € 3,38 |
1250+ | € 0,603 | € 3,02 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
8 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
4.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.89mm
Transistor Material
Si
Typical Gate Charge @ Vgs
20 nC @ 10 V, 8.8 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
4.9mm
Minimum Operating Temperature
-55 °C
Height
1.04mm
Päritoluriik
China
Toote üksikasjad