Vishay SQ Rugged P-Channel MOSFET, 6.2 A, 30 V, 8-Pin SOIC SQ4431EY-T1_GE3

RS tootekood: 819-3920PBränd: VishayTootja Part nr.: SQ4431EY-T1_GE3
brand-logo
Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

6.2 A

Maximum Drain Source Voltage

30 V

Series

SQ Rugged

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

52 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

1.55mm

Päritoluriik

China

Toote üksikasjad

P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Lao andmed ajutiselt ei ole saadaval.

€ 72,40

tk (rullis) (ilma käibemaksuta)

€ 88,33

tk (rullis) (koos käibemaksuga)

Vishay SQ Rugged P-Channel MOSFET, 6.2 A, 30 V, 8-Pin SOIC SQ4431EY-T1_GE3
Valige pakendi tüüp

€ 72,40

tk (rullis) (ilma käibemaksuta)

€ 88,33

tk (rullis) (koos käibemaksuga)

Vishay SQ Rugged P-Channel MOSFET, 6.2 A, 30 V, 8-Pin SOIC SQ4431EY-T1_GE3
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

6.2 A

Maximum Drain Source Voltage

30 V

Series

SQ Rugged

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

52 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

1.55mm

Päritoluriik

China

Toote üksikasjad

P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more