Tehnilised dokumendid
Spetsifikatsioonid:
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
5.3 A
Maximum Drain Source Voltage
1700 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
78 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +25 V
Width
10.99mm
Transistor Material
SiC
Number of Elements per Chip
1
Length
10.23mm
Typical Gate Charge @ Vgs
13 nC @ 20 V
Maximum Operating Temperature
+150 °C
Height
4.57mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
3.8V
Päritoluriik
China
Toote üksikasjad
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
MOSFET Transistors, Wolfspeed
€ 19,80
€ 9,90 tk (pakis 2) (ilma käibemaksuta)
€ 24,16
€ 12,078 tk (pakis 2) (koos käibemaksuga)
Standard
2
€ 19,80
€ 9,90 tk (pakis 2) (ilma käibemaksuta)
€ 24,16
€ 12,078 tk (pakis 2) (koos käibemaksuga)
Standard
2
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Pakend |
---|---|---|
2 - 8 | € 9,90 | € 19,80 |
10 - 18 | € 9,30 | € 18,60 |
20 - 48 | € 9,10 | € 18,20 |
50 - 98 | € 8,80 | € 17,60 |
100+ | € 8,60 | € 17,20 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
5.3 A
Maximum Drain Source Voltage
1700 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
78 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +25 V
Width
10.99mm
Transistor Material
SiC
Number of Elements per Chip
1
Length
10.23mm
Typical Gate Charge @ Vgs
13 nC @ 20 V
Maximum Operating Temperature
+150 °C
Height
4.57mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
3.8V
Päritoluriik
China
Toote üksikasjad
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.