Tehnilised dokumendid
Spetsifikatsioonid:
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
1000 V
Series
C3M
Package Type
TO-247-4
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
113.5 W
Maximum Gate Source Voltage
-8 V, +19 V
Length
16.13mm
Typical Gate Charge @ Vgs
35 nC @ 15 V, 35 nC @ 4 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Width
5.21mm
Transistor Material
SiC
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
4.8V
Height
23.6mm
Toote üksikasjad
Silicon Carbide Power MOSFET, C3M Series, Cree Inc.
MOSFET Transistors, Cree Inc.
€ 492,50
€ 19,70 tk (torus) (ilma käibemaksuta)
€ 600,85
€ 24,03 tk (torus) (koos käibemaksuga)
Tootmispakett (Tuub)
25
€ 492,50
€ 19,70 tk (torus) (ilma käibemaksuta)
€ 600,85
€ 24,03 tk (torus) (koos käibemaksuga)
Tootmispakett (Tuub)
25
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind |
---|---|
25 - 74 | € 19,70 |
75 - 149 | € 19,20 |
150+ | € 18,70 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
1000 V
Series
C3M
Package Type
TO-247-4
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
113.5 W
Maximum Gate Source Voltage
-8 V, +19 V
Length
16.13mm
Typical Gate Charge @ Vgs
35 nC @ 15 V, 35 nC @ 4 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Width
5.21mm
Transistor Material
SiC
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
4.8V
Height
23.6mm
Toote üksikasjad