Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonMemory Size
256kbit
Organisation
32K x 8 bit
Interface Type
SPI
Data Bus Width
8bit
Maximum Random Access Time
16ns
Mounting Type
Surface Mount
Package Type
DFN
Pin Count
8
Dimensions
4 x 4.5 x 0.7mm
Length
4.5mm
Width
4mm
Maximum Operating Supply Voltage
3.6 V
Height
0.7mm
Maximum Operating Temperature
+85 °C
Number of Words
32K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2 V
Number of Bits per Word
8bit
Toote üksikasjad
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
€ 16,80
€ 8,40 tk (pakis 2) (ilma käibemaksuta)
€ 20,50
€ 10,248 tk (pakis 2) (koos käibemaksuga)
Standard
2
€ 16,80
€ 8,40 tk (pakis 2) (ilma käibemaksuta)
€ 20,50
€ 10,248 tk (pakis 2) (koos käibemaksuga)
Standard
2
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Pakend |
---|---|---|
2 - 8 | € 8,40 | € 16,80 |
10 - 18 | € 6,50 | € 13,00 |
20 - 98 | € 6,30 | € 12,60 |
100 - 498 | € 6,20 | € 12,40 |
500+ | € 6,00 | € 12,00 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonMemory Size
256kbit
Organisation
32K x 8 bit
Interface Type
SPI
Data Bus Width
8bit
Maximum Random Access Time
16ns
Mounting Type
Surface Mount
Package Type
DFN
Pin Count
8
Dimensions
4 x 4.5 x 0.7mm
Length
4.5mm
Width
4mm
Maximum Operating Supply Voltage
3.6 V
Height
0.7mm
Maximum Operating Temperature
+85 °C
Number of Words
32K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2 V
Number of Bits per Word
8bit
Toote üksikasjad
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.