Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
40 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
4.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
55 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
6.1mm
Length
5.1mm
Typical Gate Charge @ Vgs
18 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.05mm
Päritoluriik
Malaysia
€ 10,50
€ 1,05 tk (pakis 10) (ilma käibemaksuta)
€ 13,02
€ 1,302 tk (pakis 10) (koos käibemaksuga)
Standard
10
€ 10,50
€ 1,05 tk (pakis 10) (ilma käibemaksuta)
€ 13,02
€ 1,302 tk (pakis 10) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
Standard
10
Lao andmed ajutiselt ei ole saadaval.
kogus | Ühikuhind | Per Pakend |
---|---|---|
10 - 90 | € 1,05 | € 10,50 |
100 - 240 | € 0,909 | € 9,09 |
250 - 490 | € 0,789 | € 7,89 |
500 - 990 | € 0,693 | € 6,93 |
1000+ | € 0,63 | € 6,30 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
40 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
4.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
55 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
6.1mm
Length
5.1mm
Typical Gate Charge @ Vgs
18 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.05mm
Päritoluriik
Malaysia