STMicroelectronics STripFET II N-Channel MOSFET, 80 A, 55 V, 3-Pin TO-220 STP80NF55-06
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
55 V
Series
STripFET II
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.4mm
Typical Gate Charge @ Vgs
142 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Height
9.15mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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€ 97,50
€ 1,95 tk (torus 50) (ilma käibemaksuta)
€ 120,90
€ 2,418 tk (torus 50) (koos käibemaksuga)
50
€ 97,50
€ 1,95 tk (torus 50) (ilma käibemaksuta)
€ 120,90
€ 2,418 tk (torus 50) (koos käibemaksuga)
50
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
| kogus | Ühikuhind | Per Tuub |
|---|---|---|
| 50 - 50 | € 1,95 | € 97,50 |
| 100 - 150 | € 1,70 | € 85,00 |
| 200 - 450 | € 1,65 | € 82,50 |
| 500 - 950 | € 1,65 | € 82,50 |
| 1000+ | € 1,60 | € 80,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
55 V
Series
STripFET II
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.4mm
Typical Gate Charge @ Vgs
142 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Height
9.15mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products