Diodes Inc Dual N/P-Channel MOSFET, 2.1 A, 5.2 A, 20 V, 6-Pin TSOT-26 DMC2038LVT-7
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
2.1 A, 5.2 A
Maximum Drain Source Voltage
20 V
Package Type
TSOT-26
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
56 mΩ, 168 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Typical Gate Charge @ Vgs
12 nC @ 10 V, 14 nC @ 10 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
2
Width
1.65mm
Length
2.95mm
Minimum Operating Temperature
-55 °C
Height
0.9mm
Päritoluriik
China
Toote üksikasjad
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 70,80
€ 0,118 tk (rullis) (ilma käibemaksuta)
€ 86,38
€ 0,144 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
600
€ 70,80
€ 0,118 tk (rullis) (ilma käibemaksuta)
€ 86,38
€ 0,144 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
600
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
| kogus | Ühikuhind | Per Rull |
|---|---|---|
| 600 - 1450 | € 0,118 | € 5,90 |
| 1500+ | € 0,087 | € 4,35 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
2.1 A, 5.2 A
Maximum Drain Source Voltage
20 V
Package Type
TSOT-26
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
56 mΩ, 168 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Typical Gate Charge @ Vgs
12 nC @ 10 V, 14 nC @ 10 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
2
Width
1.65mm
Length
2.95mm
Minimum Operating Temperature
-55 °C
Height
0.9mm
Päritoluriik
China
Toote üksikasjad
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products