Tehnilised dokumendid
Spetsifikatsioonid:
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
1.8 A, 1.5 A
Maximum Drain Source Voltage
60 V
Package Type
SM
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
300 mΩ, 425 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Full Bridge
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
1.65 nC @ 5 V, 2.4 nC @ 5 V
Width
3.7mm
Transistor Material
Si
Number of Elements per Chip
4
Length
6.7mm
Maximum Operating Temperature
+150 °C
Height
1.6mm
Minimum Operating Temperature
-55 °C
Päritoluriik
Germany
Toote üksikasjad
Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.
MOSFET Transistors, Diodes Inc.
€ 16,50
tk (rullis) (ilma käibemaksuta)
€ 20,46
tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
10
€ 16,50
tk (rullis) (ilma käibemaksuta)
€ 20,46
tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
10
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
1.8 A, 1.5 A
Maximum Drain Source Voltage
60 V
Package Type
SM
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
300 mΩ, 425 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Full Bridge
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
1.65 nC @ 5 V, 2.4 nC @ 5 V
Width
3.7mm
Transistor Material
Si
Number of Elements per Chip
4
Length
6.7mm
Maximum Operating Temperature
+150 °C
Height
1.6mm
Minimum Operating Temperature
-55 °C
Päritoluriik
Germany
Toote üksikasjad