Diodes Inc Quad N/P-Channel MOSFET, 1.8 A, 1.5 A, 60 V, 8-Pin SM ZXMHC6A07T8TA

RS tootekood: 669-7461PBränd: DiodesZetexTootja Part nr.: ZXMHC6A07T8TA
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N, P

Maximum Continuous Drain Current

1.8 A, 1.5 A

Maximum Drain Source Voltage

60 V

Package Type

SM

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

300 mΩ, 425 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

1.7 W

Transistor Configuration

Full Bridge

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

1.65 nC @ 5 V, 2.4 nC @ 5 V

Width

3.7mm

Transistor Material

Si

Number of Elements per Chip

4

Length

6.7mm

Maximum Operating Temperature

+150 °C

Height

1.6mm

Minimum Operating Temperature

-55 °C

Päritoluriik

Germany

Toote üksikasjad

Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.

MOSFET Transistors, Diodes Inc.

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Lao andmed ajutiselt ei ole saadaval.

€ 16,50

tk (rullis) (ilma käibemaksuta)

€ 20,46

tk (rullis) (koos käibemaksuga)

Diodes Inc Quad N/P-Channel MOSFET, 1.8 A, 1.5 A, 60 V, 8-Pin SM ZXMHC6A07T8TA
Valige pakendi tüüp

€ 16,50

tk (rullis) (ilma käibemaksuta)

€ 20,46

tk (rullis) (koos käibemaksuga)

Diodes Inc Quad N/P-Channel MOSFET, 1.8 A, 1.5 A, 60 V, 8-Pin SM ZXMHC6A07T8TA
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N, P

Maximum Continuous Drain Current

1.8 A, 1.5 A

Maximum Drain Source Voltage

60 V

Package Type

SM

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

300 mΩ, 425 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

1.7 W

Transistor Configuration

Full Bridge

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

1.65 nC @ 5 V, 2.4 nC @ 5 V

Width

3.7mm

Transistor Material

Si

Number of Elements per Chip

4

Length

6.7mm

Maximum Operating Temperature

+150 °C

Height

1.6mm

Minimum Operating Temperature

-55 °C

Päritoluriik

Germany

Toote üksikasjad

Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more