Infineon OptiMOS™ 5 N-Channel MOSFET, 137 A, 60 V, 8-Pin TDSON BSC028N06NSATMA1

RS tootekood: 906-4296Bränd: InfineonTootja Part nr.: BSC028N06NSATMA1
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

137 A

Maximum Drain Source Voltage

60 V

Package Type

TDSON

Series

OptiMOS™ 5

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.3V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

100 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.35mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Length

6.1mm

Typical Gate Charge @ Vgs

37 nC @ 10 V

Height

1.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Toote üksikasjad

Infineon OptiMOS™5 Power MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Lao andmed ajutiselt ei ole saadaval.

€ 22,50

€ 2,25 tk (pakis 10) (ilma käibemaksuta)

€ 27,45

€ 2,745 tk (pakis 10) (koos käibemaksuga)

Infineon OptiMOS™ 5 N-Channel MOSFET, 137 A, 60 V, 8-Pin TDSON BSC028N06NSATMA1
Valige pakendi tüüp

€ 22,50

€ 2,25 tk (pakis 10) (ilma käibemaksuta)

€ 27,45

€ 2,745 tk (pakis 10) (koos käibemaksuga)

Infineon OptiMOS™ 5 N-Channel MOSFET, 137 A, 60 V, 8-Pin TDSON BSC028N06NSATMA1
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

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kogusÜhikuhindPer Pakend
10 - 40€ 2,25€ 22,50
50 - 90€ 2,10€ 21,00
100 - 240€ 2,05€ 20,50
250 - 490€ 1,95€ 19,50
500+€ 1,80€ 18,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

137 A

Maximum Drain Source Voltage

60 V

Package Type

TDSON

Series

OptiMOS™ 5

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.3V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

100 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.35mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Length

6.1mm

Typical Gate Charge @ Vgs

37 nC @ 10 V

Height

1.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Toote üksikasjad

Infineon OptiMOS™5 Power MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more