Infineon SIPMOS® P-Channel MOSFET, 1.17 A, 60 V, 3-Pin SOT-223 BSP315PH6327XTSA1

RS tootekood: 826-9238PBränd: InfineonTootja Part nr.: BSP315PH6327XTSA1
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

1.17 A

Maximum Drain Source Voltage

60 V

Series

SIPMOS®

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

800 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.5mm

Typical Gate Charge @ Vgs

5.2 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.6mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Lao andmed ajutiselt ei ole saadaval.

€ 49,80

€ 0,498 tk (rullis) (ilma käibemaksuta)

€ 60,76

€ 0,608 tk (rullis) (koos käibemaksuga)

Infineon SIPMOS® P-Channel MOSFET, 1.17 A, 60 V, 3-Pin SOT-223 BSP315PH6327XTSA1
Valige pakendi tüüp

Tootmispakett (Rull)

Valige pakendi tüüp

Standard - each

Saadaval mitmekordselt 50.

Tootmine -

Saadaval mitmekordselt 50.

Soovitatav suurte koguste tellimuste korral. Tooted on pakendatud masinatesse sisestamiseks, mis võimaldab teil parandada tootmise efektiivsust.

100

Saadaval mitmekordselt 50
100€ 49,80
150€ 74,70
200€ 99,60
250€ 116,00
300€ 139,20
350€ 162,40
400€ 185,60
450€ 208,80
500€ 216,00
550€ 237,60
600€ 259,20
650€ 280,80
700€ 302,40
750€ 324,00
800€ 345,60

€ 49,80

€ 0,498 tk (rullis) (ilma käibemaksuta)

€ 60,76

€ 0,608 tk (rullis) (koos käibemaksuga)

Infineon SIPMOS® P-Channel MOSFET, 1.17 A, 60 V, 3-Pin SOT-223 BSP315PH6327XTSA1
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Tootmispakett (Rull)

Valige pakendi tüüp

Standard - each

Saadaval mitmekordselt 50.

Tootmine -

Saadaval mitmekordselt 50.

Soovitatav suurte koguste tellimuste korral. Tooted on pakendatud masinatesse sisestamiseks, mis võimaldab teil parandada tootmise efektiivsust.

100

Saadaval mitmekordselt 50
100€ 49,80
150€ 74,70
200€ 99,60
250€ 116,00
300€ 139,20
350€ 162,40
400€ 185,60
450€ 208,80
500€ 216,00
550€ 237,60
600€ 259,20
650€ 280,80
700€ 302,40
750€ 324,00
800€ 345,60

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

kogusÜhikuhindPer Rull
100 - 200€ 0,498€ 24,90
250 - 450€ 0,464€ 23,20
500 - 1200€ 0,432€ 21,60
1250+€ 0,40€ 20,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

1.17 A

Maximum Drain Source Voltage

60 V

Series

SIPMOS®

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

800 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.5mm

Typical Gate Charge @ Vgs

5.2 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.6mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more