Infineon IKW25N120H3FKSA1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
326 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
16.13 x 5.21 x 21.1mm
Maximum Operating Temperature
+175 °C
Energy Rating
4.3mJ
Minimum Operating Temperature
-40 °C
Gate Capacitance
1430pF
Päritoluriik
Malaysia
Toote üksikasjad
Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 153,00
€ 5,10 tk (torus 30) (ilma käibemaksuta)
€ 186,66
€ 6,222 tk (torus 30) (koos käibemaksuga)
30
€ 153,00
€ 5,10 tk (torus 30) (ilma käibemaksuta)
€ 186,66
€ 6,222 tk (torus 30) (koos käibemaksuga)
30
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
| kogus | Ühikuhind | Per Tuub |
|---|---|---|
| 30 - 30 | € 5,10 | € 153,00 |
| 60 - 120 | € 4,85 | € 145,50 |
| 150+ | € 4,65 | € 139,50 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
326 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
16.13 x 5.21 x 21.1mm
Maximum Operating Temperature
+175 °C
Energy Rating
4.3mJ
Minimum Operating Temperature
-40 °C
Gate Capacitance
1430pF
Päritoluriik
Malaysia
Toote üksikasjad
Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products