Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 44 A, 650 V, 8-Pin PG-HSOF-8 IMT65R057M1HXUMA1

RS tootekood: 284-726PBränd: InfineonTootja Part nr.: IMT65R057M1HXUMA1
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

44 A

Maximum Drain Source Voltage

650 V

Package Type

PG-HSOF-8

Series

CoolSiC MOSFET 650 V G1

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

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Lao andmed ajutiselt ei ole saadaval.

€ 114,00

€ 11,40 tk (rullis) (ilma käibemaksuta)

€ 139,08

€ 13,91 tk (rullis) (koos käibemaksuga)

Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 44 A, 650 V, 8-Pin PG-HSOF-8 IMT65R057M1HXUMA1
Valige pakendi tüüp

€ 114,00

€ 11,40 tk (rullis) (ilma käibemaksuta)

€ 139,08

€ 13,91 tk (rullis) (koos käibemaksuga)

Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 44 A, 650 V, 8-Pin PG-HSOF-8 IMT65R057M1HXUMA1
Lao andmed ajutiselt ei ole saadaval.
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kogusÜhikuhind
10 - 99€ 11,40
100 - 499€ 10,50
500 - 999€ 9,80
1000+€ 8,80

Ideate. Create. Collaborate

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

44 A

Maximum Drain Source Voltage

650 V

Package Type

PG-HSOF-8

Series

CoolSiC MOSFET 650 V G1

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more