Tehnilised dokumendid
Spetsifikatsioonid:
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
250 V
Series
Trench
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
24 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
694 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
5.3mm
Length
16.26mm
Typical Gate Charge @ Vgs
157 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
21.46mm
Toote üksikasjad
N-Channel Trench-Gate Power MOSFET, IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
€ 225,00
€ 7,50 tk (torus 30) (ilma käibemaksuta)
€ 274,50
€ 9,15 tk (torus 30) (koos käibemaksuga)
30
€ 225,00
€ 7,50 tk (torus 30) (ilma käibemaksuta)
€ 274,50
€ 9,15 tk (torus 30) (koos käibemaksuga)
30
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
250 V
Series
Trench
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
24 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
694 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
5.3mm
Length
16.26mm
Typical Gate Charge @ Vgs
157 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
21.46mm
Toote üksikasjad
N-Channel Trench-Gate Power MOSFET, IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS