Tehnilised dokumendid
Spetsifikatsioonid:
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-2 A
Maximum Collector Emitter Voltage
-20 V
Package Type
SOT-23 (TO-236AB)
Mounting Type
Surface Mount
Maximum Power Dissipation
480 mW
Minimum DC Current Gain
225
Transistor Configuration
Single
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
1 x 3 x 1.4mm
Maximum Operating Temperature
+150 °C
Päritoluriik
China
Toote üksikasjad
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
€ 3,00
€ 0,30 tk (pakis 10) (ilma käibemaksuta)
€ 3,72
€ 0,372 tk (pakis 10) (koos käibemaksuga)
Standard
10
€ 3,00
€ 0,30 tk (pakis 10) (ilma käibemaksuta)
€ 3,72
€ 0,372 tk (pakis 10) (koos käibemaksuga)
Standard
10
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Pakend |
---|---|---|
10 - 90 | € 0,30 | € 3,00 |
100+ | € 0,154 | € 1,54 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-2 A
Maximum Collector Emitter Voltage
-20 V
Package Type
SOT-23 (TO-236AB)
Mounting Type
Surface Mount
Maximum Power Dissipation
480 mW
Minimum DC Current Gain
225
Transistor Configuration
Single
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
1 x 3 x 1.4mm
Maximum Operating Temperature
+150 °C
Päritoluriik
China
Toote üksikasjad
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.