Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
880 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
350 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
2
Length
2.2mm
Typical Gate Charge @ Vgs
2.2 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
Dual P-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
€ 8,28
€ 0,331 tk (pakis 25) (ilma käibemaksuta)
€ 10,10
€ 0,404 tk (pakis 25) (koos käibemaksuga)
Standard
25
€ 8,28
€ 0,331 tk (pakis 25) (ilma käibemaksuta)
€ 10,10
€ 0,404 tk (pakis 25) (koos käibemaksuga)
Standard
25
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Pakend |
---|---|---|
25 - 75 | € 0,331 | € 8,28 |
100 - 225 | € 0,286 | € 7,15 |
250 - 475 | € 0,247 | € 6,18 |
500 - 975 | € 0,218 | € 5,45 |
1000+ | € 0,198 | € 4,95 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
880 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
350 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
2
Length
2.2mm
Typical Gate Charge @ Vgs
2.2 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad