onsemi Dual P-Channel MOSFET, 880 mA, 20 V, 6-Pin SOT-363 NTJD4152PT1G

RS tootekood: 780-0611Bränd: onsemiTootja Part nr.: NTJD4152PT1G
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

880 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

350 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-12 V, +12 V

Width

1.35mm

Transistor Material

Si

Number of Elements per Chip

2

Length

2.2mm

Typical Gate Charge @ Vgs

2.2 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

Dual P-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Lao andmed ajutiselt ei ole saadaval.

€ 8,28

€ 0,331 tk (pakis 25) (ilma käibemaksuta)

€ 10,10

€ 0,404 tk (pakis 25) (koos käibemaksuga)

onsemi Dual P-Channel MOSFET, 880 mA, 20 V, 6-Pin SOT-363 NTJD4152PT1G
Valige pakendi tüüp

€ 8,28

€ 0,331 tk (pakis 25) (ilma käibemaksuta)

€ 10,10

€ 0,404 tk (pakis 25) (koos käibemaksuga)

onsemi Dual P-Channel MOSFET, 880 mA, 20 V, 6-Pin SOT-363 NTJD4152PT1G
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

kogusÜhikuhindPer Pakend
25 - 75€ 0,331€ 8,28
100 - 225€ 0,286€ 7,15
250 - 475€ 0,247€ 6,18
500 - 975€ 0,218€ 5,45
1000+€ 0,198€ 4,95

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

880 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

350 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-12 V, +12 V

Width

1.35mm

Transistor Material

Si

Number of Elements per Chip

2

Length

2.2mm

Typical Gate Charge @ Vgs

2.2 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

Dual P-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more